Description

The HYNIX HY27UF084G2M-TPCB is an IC chip model that belongs to the high-density NAND flash memory category. It has a capacity of 512Mx8 bits with an additional spare capacity of 16Mx8 bits. The device operates at 3.3V Vcc Power Supply and provides the most cost-effective means of mass storage in the solid-state market. The NAND cell allows for independent erasing of the memory blocks, enabling the preservation of valid data while the old data is removed. The device contains 4096 blocks, divided into 64 pages, two NAND structure of 32 series connected Flash cells each. The I/O pins serve as ports for address and data input/output, including command input, reducing the pin count and enabling migration to different densities without rearrangement of the footprint.

Specifications and features

• 512Mx8 bits
• Spare Capacity: 16Mx8 bits
• 3.3V Vcc Power Supply
• 4096 blocks with 64 pages, two NAND structures of 32 series connected Flash cells each
• High-Density NAND Flash Memory
• Cost-effective for mass storage applications
• x8 width
• PINOUT Compatibility for all densities
• Fast Block Erase - Block erase time: 2ms (Typ.)
• Program/Erase locked during Power transitions
• HARDWARE DATA PROTECTION
• Data Integrity - 100,000 Program/Erase cycles (with 1bit/512byte ECC), 10 years Data Retention
• Packages: HY27UF084G2M-T(P); 48-Pin TSOP1 (12 x 20 x 1.2mm), HY27UF084G2M-T (Lead), HY27UF084G2M-TP (Lead Free), HY27UF084G2M-UP; 52-ULGA (12 x 17 x 0.65 mm), HY27UF084G2M-UP (Lead Free)

Application Scenarios

The HY27UF084G2M-TPCB IC chip model is suitable for use in a variety of applications that require high-density NAND flash memory with hardware data protection. Some examples of these applications include USB drives, memory cards, set-top boxes, digital televisions, and other consumer applications.

Comparison

• Provides the most cost-effective solution for mass storage applications
• Independent erasing of memory blocks enables preservation of valid data
• Data integrity with 100,000 Program/Erase cycles (with 1bit/512byte ECC) and 10 years of data retention
• Hardware data protection for program/erase during power transitions
• Multiple package options enable easy integration into various applications

• May not be suitable for use in applications that do not require high-density NAND flash memory
• May not be suitable for use in applications that do not require hardware data protection