Description

Electronic Component Model: BLF1043,112 is a 10 W LDMOS power transistor designed for base station applications at frequencies from HF to 1000 MHz. It is categorized under RF FETs and is suitable for RF power amplifiers in GSM, EDGE, and CDMA base stations, as well as multicarrier applications in the 800 to 1000 MHz frequency range. The transistor offers excellent thermal stability and ruggedness, with an efficiency of 40% and a gain of 18.5 dB.

Specifications and features

- Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA
- Output power: 10 W (PEP)
- Gain: 18.5 dB
- Efficiency: 40%
- dim: -31 dBc
- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
- Designed for broadband operation (HF to 1000 MHz)
- No internal matching for broadband operation
- SMD package

Application Scenarios

- RF power amplifiers for GSM, EDGE, and CDMA base stations
- Multicarrier applications in the 800 to 1000 MHz frequency range
- Broadcast drivers

Comparison

- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
- Broadband operation (HF to 1000 MHz)

- No internal matching for broadband operation