Description

The CY7C263-55WMB is a high-performance 8192-word by 8-bit CMOS PROM, which is a reprogrammable integrated circuit chip. It is equipped with an erasure window which allows the chip to be erased using UV light and then reprogrammed. The memory cells in the chip utilize EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C263-55WMB is available in two different package sizes: 300-mil-wide and 600-mil-wide. Unlike the CY7C261, the CY7C263-55WMB does not power down when deselected.

Specifications and features

• CMOS technology for optimal speed and power
• Windowed package allows for reprogrammability
• High-speed performance: 20 ns (Commercial), 25 ns (Military)
• Low power consumption: 660 mW (Commercial), 770 mW (Military)
• Super low standby power for the CY7C261: Less than 220 mW when deselected
• Fast access time: 20 ns
• 100% programmable using EPROM technology
• Slim 300-mil or standard 600-mil packaging available
• Operating voltage: 5V ± 10% VCC for both commercial and military use
• Capable of withstanding greater than 2001V static discharge
• TTL-compatible I/O
• Direct replacement for bipolar PROMs

Application Scenarios

The CY7C263-55WMB can be used in various applications that require reprogrammable memory, such as embedded systems, microcontrollers, and industrial control systems. Additionally, its low power consumption and high-speed performance make it suitable for battery-powered devices and applications that require rapid data access.

Comparison

• Reprogrammable design allows for flexibility and updates
• Low power consumption
• High-speed performance
• Wide range of operating voltage
• Capable of withstanding static discharge

• Does not power down when deselected (unlike the CY7C261)