Description

The IRS2108/IRS21084 are high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Specifications and features

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High-side output in phase with HIN input
• Low-side output out of phase with LIN input
• Logic and power ground +/- 5 V offset
• Internal 540 ns deadtime, and programmable up to 5 µs with one external RDT resistor (IRS21084)
• Lower di/dt gate driver for better noise immunity
• RoHS compliant

Application Scenarios

This electronic component model, IRS2108DS, can be used in various power MOSFET and IGBT driver applications. It is designed to operate at high voltages up to 600 V and is compatible with different input logic levels (3.3 V, 5 V, and 15 V). The floating channel is specifically designed for bootstrap operation, providing reliable and efficient performance.

Comparison

- High voltage and high-speed operation
- Ruggedized monolithic construction
- Tolerant to negative transient voltage
- Multiple input logic compatibility

- Requires external RDT resistor for extended programmable deadtime
- Higher di/dt gate driver may require additional noise mitigation measures