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Description
The JD1803 is a bipolar NPN Power Transistor with an integrated Collector-Emitter diode and an efficient antisaturation network, belonging to the IC Chips product category. It is a high-speed and high-gain transistor known for its tight dynamic characteristics and lot to lot minimum spread. It is the perfect choice for light ballast applications as there is no longer a need to guarantee an hFE window.
Specifications and features
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure
- Integrated Collector−Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCEsat
- Characteristics Make It Suitable for PFC Application
- Epoxy Meets UL 94 V−0 @ 0.125 in
- ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
- Six Sigma® Process Providing Tight and Reproducible Parameter Spreads
- Pb−Free Package is Available
Application Scenarios
The JD1803 transistor is widely used in light ballast applications and Power Factor Correction (PFC) applications due to its superior dynamic characteristics and tight parameter spreads. It is well suited for environments that require speed and high gain performance such as audio amplifiers, radio frequency circuits, and power supplies.
Comparison
Advantages- Tight dynamic characteristics
- Lot to lot minimum spread
- Integrated collector−emitter diode
- Efficient antisaturation network
- High speed and high gain performance
- Fully characterized and guaranteed dynamic VCEsat
Disadvantages- Non-availability of hFE window
- Not suitable for applications that do not require high speed and gain
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download JD1803
- Chipdatas Part: CD90-JD1803
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 16:04 +0800
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