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Description
The S80016LK7TW-75AD is a 128Mb SDRAM, which is a high-speed CMOS, dynamic random-access memory. It consists of 134,217,728 bits and is internally configured as a quad-bank DRAM. The SDRAM supports burst-oriented read and write accesses, starting at a selected location and continuing for a programmed number of locations in a programmed sequence.
Specifications and features
- Intel PC-100 (3-3-3) or PC133 (3-3-3) compatible
- Fully synchronous; all signals registered on positive edge of system clock
- Internal pipelined operation; column address can be changed every clock cycle
- Internal banks for hiding row access precharge time
- Programmable burst lengths: 1, 2, or 4 using Interleaved Burst Addressing
- Auto Precharge and Auto Refresh modes
- 64ms, 4,096-cycle refresh quad-row refresh, (15.6ms/row)
- Self Refresh mode 1
- LVTTL-compatible inputs and outputs
- Single +3.3V ±0.3V power supply
- The x16 devices are optimized for both single and dual rank DIMM applications. The x8 devices are optimized for single rank DIMM applications.
Application Scenarios
- This SDRAM is commonly used in electronic devices that require high-speed and large capacity memory, such as computers, servers, and networking equipment.
Comparison
Advantages- High-speed CMOS design for fast data transfer
- Supports burst-oriented read and write accesses
- Programmable burst lengths for flexible configuration
- Auto Precharge and Auto Refresh modes for optimized performance
Disadvantages- Requires a single +3.3V ±0.3V power supply
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download S80016LK7TW-75AD
- Chipdatas Part: CD94-S80016LK7TW-75AD
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 10:40 +0800
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- Full Refund if you don't receive your order
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