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General Description
The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a 16 Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.
Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
— 3 volt read, erase, and program operations
■ Manufactured on 200 nm MirrorBit process technology
■ Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
— May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
— 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
— 64Mb (boot sector models): 127 32 Kword (64 KB) sectors + 8 4Kword (8KB) boot sectors
— 32Mb (uniform sector models): 64 32Kword (64KB) sectors
— 32Mb (boot sector models): 63 32Kword (64KB) sectors + 8 4Kword (8KB) boot sectors
— 16MB (boot sector models): 31 31Kword (64KB) sectors + 8 4Kword (8KB) boot sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical Performance Characteristics
■ High performance
— 90 ns access time
— 4-word/8-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
— 18 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA**Software & Hardware Features **
■ Software features
— Program Suspend & Resume: read other sectors before programming operation is completed
— Erase Suspend & Resume: read/program other sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
— Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
— Sector Group Protection: hardware-level method of preventing write operations within a sector group
— Temporary Sector Unprotect: VID-level method of charging code in locked sectors
— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or erase cycle completion -
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Datasheet
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- Last Updated: 2024/05/20 21:12 +0800
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