DESCRIPTION

The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high- density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application.

FEATURES

• SmartVoltage technology
– 2.7 V, 3.3 V or 5 V VCC
– 2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time LH28F800BG-L85/BGH-L85
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/ 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V) LH28F800BG-L12/BGH-L12
– 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/ 150 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Block erase/word write lockout during power transitions
– Boot blocks protection with WP# = VIL
• SRAM-compatible write interface
• Optimized array blocking architecture
– Two 4 k-word boot blocks
– Six 4 k-word parameter blocks
– Fifteen 32 k-word main blocks
– Top or bottom boot location
• Enhanced cycling capability
– 100 000 block erase cycles
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases ICC in static mode
• Automated word write and block erase
– Command user interface
– Status register
• ETOXTM∗ V nonvolatile flash technology
• Packages
– 48-pin TSOP Type I (TSOP048-P-1220) Normal bend/Reverse bend
– 48-ball CSP (FBGA048-P-0808)