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Description
These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.Specifications and features
- Ultra Low On-Resistance
- Dual N and P Channel MOSFET
- Surface Mount
- Available in Tape and Reel
Application Scenarios
These dual N and P channel HEXFET® power MOSFETs are ideal for use in DC motor drives and load management applications. The advanced processing techniques and ruggedized device design make them extremely efficient and reliable for these applications. Additionally, the modified SO-8 package enhances thermal characteristics and allows for multiple devices to be used, reducing board space.
Comparison
Advantages- Extremely low on-resistance per silicon area
Disadvantages- Specific to DC motor drives and load management applications
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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- Datasheet: Download IRF7353TRPBF
- Chipdatas Part: CD87-IRF7353TRPBF
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2023/12/10 08:56 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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