Description

The MRF5S9101NR1 is an RF power field-effect transistor (RF FET) designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. It is characterized as N-Channel enhancement-mode lateral MOSFETs to handle 10:1 VSWR with ease. The transistor is capable of operating up to a maximum of 32 VDD and comes in a 200°C-capable plastic package. It also has integrated ESD protection and is RoHS compliant.

Specifications and Features

• Product Category: RF FETs
• Transistor Type: N-Channel Lateral MOSFET
• Application: GSM and GSM EDGE Base Stations (869-960 MHz)
• Power Output: 100 W (GSM), 50 W (GSM EDGE)
• Power Gain: 17.5 dB (GSM), 18 dB (GSM EDGE)
• Drain Efficiency: 60%
• Spectral Regrowth @ 400 kHz Offset: -63 dBc (GSM EDGE)
• Spectral Regrowth @ 600 kHz Offset: -78 dBc (GSM EDGE)
• EVM: 2.3% rms (GSM EDGE)
• Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• RoHS Compliant
• Package Type: Plastic (200°C capable)

Application Scenarios

The MRF5S9101NR1 transistor is suitable for use in GSM and GSM EDGE base stations with frequencies from 869 to 960 MHz. It is also ideal for multicarrier amplifier applications.

Comparison

• Capable of handling 10:1 VSWR
• ESD protection integrated
• RoHS compliant
• 200°C-capable plastic package

• Not suitable for applications outside of GSM and GSM EDGE base stations with frequencies from 869 to 960 MHz
• Not suitable for high-power applications above 100 W (GSM) and 50 W (GSM EDGE)