UPA2755AGR - Brand New Renesas Electronics FETs - Arrays
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Description
The UPA2755AGR is a dual N-channel MOS Field Effect Transistors designed for switching applications. It has a low on-state resistance and a low gate charge. The UPA2755AGR also features a built-in G-S protection diode and comes in a small and surface mount package (Power SOP8).
Specifications and features
- Low on-state resistance
- RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
- RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
- Low gate charge
- QG = 10 nC TYP. (VGS = 10 V)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)Application Scenarios
The UPA2755AGR can be used in various switching applications where low on-state resistance and low gate charge are required. It is suitable for use in electronic devices and power management systems.
Comparison
Advantages- Low on-state resistance helps improve overall system efficiency.
- Low gate charge reduces power consumption and heat generation.
- Built-in G-S protection diode offers protection against reverse voltage spikes.
- Small and surface mount package allows for easy integration and space-saving.Disadvantages- Not suitable for high voltage applications.
- May require additional circuitry for specific application requirements. -
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Datasheet
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- Datasheet: Download UPA2755AGR
- Chipdatas Part: CD94-UPA2755AGR
- Warehouse: China, Hong Kong
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- Free Shipping: Yes
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- Last Updated: 2024/06/13 09:17 +0800
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