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2N3416 - Brand New Central Semiconductor Transistors (BJT) - Single - Datasheet - Chipdatas

2N3416 - Brand New Central Semiconductor Transistors (BJT) - Single

In Stock:200000 ,Ready for Immediate Shipping
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In Stock: 200000, Ready for Immediate Shipping
Chipdatas Part No.:CD86-2N3416
Manufacturer Part No.:2N3416
Datecode:09+
Package:TO-226-3, TO-92-3 TO-226AA
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  • Description

    The 2N3416 is a NPN general purpose amplifier transistor, widely used in a variety of electronic circuits. It is a versatile transistor that can be used for amplification as well as switching applications. The device is capable of handling collector currents up to 300 mA, making it suitable for a range of uses. It is sourced from Process 10 and has similar characteristics to the PN100A transistor.

    Specifications and features

    • Product Category: Transistors (BJT) - Single
    • Transistor Polarity: NPN
    • Collector- Emitter Voltage VCEO Max: 60 V
    • Emitter- Base Voltage VEBO: 5 V
    • Max Operating Temperature: 200 °C
    • Continuous Collector Current at 25°C: 0.3 A
    • Power Dissipation: 625 mW
    • DC Current Gain (hFE) Min: 40
    • Max DC Collector Current: 0.3 A
    • Configuration: Single

    Application Scenarios

    The 2N3416 transistor can be used in a wide variety of electronic circuit applications, such as:

    • Audio amplifiers
    • Signal amplifiers
    • Switching applications
    • Oscillators
    • Frequency generation circuits

    Comparison

    Advantages
    • Capable of high collector currents
    • Can be used for a range of applications
    • Designed for use as general purpose amplifiers
    Disadvantages
    • Not suitable for high frequency applications
    • May require heat sinking at high current levels
  • Similar parts: 7128 , Click to view
    Attributes Value
    Category Transistors (BJT) - Single
    Manufacturer Central Semiconductor
    Product Category Transistors (BJT) - Single
    Series 2N3416
    Packaging Bulk
    Part-Aliases BK
    Unit-Weight 0.016000 oz
    Mounting-Style Through Hole
    Package-Case TO-226-3, TO-92-3 (TO-226AA)
    Mounting-Type Through Hole
    Supplier-Device-Package TO-92
    Configuration Single
    Power-Max -
    Transistor-Type NPN
    Electric current collectors -
    Voltage-Collector-Emitter-Breakdown-Max 50V
    DC-Current-Gain-hFE-Min-Ic-Vce 75 @ 2mA, 4.5V
    Vce saturation -
    Current-Collector-Cutoff-Max 100nA (ICBO)
    Frequency-Transition -
    Pd-Power-Dissipation 625 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 65 C
    Collector-Emitter-Voltage-VCEO-Max 50 V
    Transistor-Polarity NPN
    Collector-Emitter-Saturation-Voltage 300 mV
    Collector-Base-Voltage-VCBO 50 V
    Emitter-Base-Voltage-VEBO 5 V
    Maximum-DC-Collector-Current 500 mA
    Continuous-Collector-Current 0.45 A
    DC-Collector-Base-Gain-hfe-Min 180
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Additional Information
  • Datasheet: Download 2N3416
  • Chipdatas Part: CD86-2N3416
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/05/24 05:42 +0800
Refund
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