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FDD8424H - Brand New onsemi FETs - Arrays - Datasheet - Chipdatas

FDD8424H - Brand New onsemi FETs - Arrays

In Stock:200000 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 200000, Ready for Immediate Shipping
Brand:onsemi
Category:FETs - Arrays
Chipdatas Part No.:CD93-FDD8424H
Manufacturer Part No.:FDD8424H
Datecode:09+
Package:TO-252-5, DPak 4 Leads + Tab, TO-252AD
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  • Description

    The FDD8424H is an electronic component model categorized as FETs - Arrays.

    Specifications and features

    The FDD8424H features the following characteristics: - RDS(ON) = 4mΩ (Typ), VGS = 10V, ID = 50A - Qg(10) = 89nC (Typ), VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse/Repetitive Pulse) - Qualified to AEC Q101 - RoHS Compliant

    Application Scenarios

    The FDD8424H can be used in various electronic applications such as power control systems, motor drive circuits, and voltage converters.

    Comparison

    Based on its specifications and features, the FDD8424H offers the following advantages and disadvantages:
    Advantages
    - Low RDS(ON) for efficient power transfer - Low Miller Charge for fast switching speeds - Low Qrr Body Diode for reduced reverse recovery time - UIS Capability for reliable operation under high voltage conditions - Qualified to AEC Q101 standards and RoHS Compliant for quality assurance and environmental compliance
    Disadvantages
    Currently, no significant disadvantages have been reported for the FDD8424H.
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer onsemi
    Product Category FETs - Arrays
    Series PowerTrench®
    Packaging Alternate Packaging
    Unit-Weight 0.009184 oz
    Mounting-Style SMD/SMT
    Package-Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package TO-252-4L
    Configuration Dual Common Drain
    FET-Type N and P-Channel
    Power-Max 1.3W
    Transistor-Type 1 N-Channel 1 P-Channel
    VDSS – Drain-Source Voltage 40V
    Input Capacitance 1000pF @ 20V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 9A, 6.5A
    Rds-On-Max-Id-Vgs 24 mOhm @ 9A, 10V
    Vgs-th-Max-Id 3V @ 250μA
    Gate-Charge-Qg-Vgs 20nC @ 10V
    Pd-Power-Dissipation 3.1 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 6 ns 3 ns
    Rise-Time 13 ns 3 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 9 A
    Vds-Drain-Source-Breakdown-Voltage 40 V
    Rds-On-Drain-Source-Resistance 24 mOhms
    Transistor-Polarity N-Channel P-Channel
    Typical-Turn-Off-Delay-Time 17 ns 20 ns
    Turn-On Delay Time 7 ns
    Transconductance 29 S
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Contact us
Additional Information
  • Datasheet: Download FDD8424H
  • Chipdatas Part: CD93-FDD8424H
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 16:16 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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  • We recommend to use bank transfer for large orders to save on handling fees.
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