BFR182W H6327 - Brand New Infineon RF Transistors (BJT)
In Stock:205380 ,Ready for Immediate Shipping
New
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In Stock:
205380,
Ready for Immediate Shipping
Brand:Infineon
Category:RF Transistors (BJT)
Chipdatas Part No.:CD93-BFR182W H6327
Manufacturer Part No.:BFR182W H6327
Datecode:09+
Package:SC-70, SOT-323
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Description
The BFR182W H6327 is an NPN Silicon RF Transistor belonging to the RF Transistors (BJT) category of electronic components. It is used for designing low noise, high gain broadband amplifiers that operate at collector currents ranging from 1 mA to 20 mA. Its excellent performance specifications make it a popular choice in electronic circuit design.
Specifications and features
- Product Category: RF Transistors (BJT)
- Transistor Polarity: NPN
- Collector-Base Voltage: 20V
- Collector Current: 50mA
- Emitter-Base Voltage: 4V
- Power Dissipation Pd: 250mW
- DC Collector Current: 20mA
- Transition Frequency ft: 8GHz
- Beta (Current Gain) hFE: 175
- Mounting Style: SMD
Application Scenarios
The BFR182W H6327 transistor is widely used in various electronic circuits such as broadband amplifier designs, radio frequency (RF) power amplifiers, RF oscillators, mixers and many more.
Comparison
Advantages- High gain and low noise characteristics make it ideal for RF applications
- Offers good frequency response S21 and S12
- BFR182W H6327 is a surface mount device which makes it easy to install on a printed circuit board (PCB)
Disadvantages- The maximum collector current is limited to 20 mA
- May not be ideal for high power RF applications
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Similar parts: 819 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Additional Information
- Datasheet: Download BFR182W H6327
- Chipdatas Part: CD93-BFR182W H6327
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 05:55 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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Payment Method
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