Description

The CKV2510 is a CMOS static RAM organized as 131072 words by 8-bit, with a capacity of 1048576 bits. It uses high-performance quadruple-polysilicon and double metal CMOS technology and thin film transistor (TFT) load cells, resulting in a high-density and low-power static RAM. In addition, it has low standby and operation currents, making it ideal for battery backup applications. It is available in two packaging types: M5M5V108CVP,KV (normal lead bend type package) and M5M5V108CRV,KR (reverse lead bend type package).

Specifications and features

• Organization: 131072 words x 8 bits
• Technology: CMOS
• Low standby current: 0.1µA (typical)
• TTL compatible inputs and outputs
• Easy memory expansion and power down by S1, S2
• Data hold on +2V power supply
• Three-state outputs: OR-tie capability
• Common data I/O
• Packaging options: 32-pin 525mil SOP, 32-pin 8 X 20 mm2 TSOP, and 32-pin 8 X 13.4 mm2 TSOP

Application Scenarios

The CKV2510 is ideal for small capacity memory units.

Comparison

• High-density and low-power static RAM
• Low standby and operation currents
• Directly TTL compatible inputs and outputs
• Easy memory expansion and power down

• Limited RAM capacity compared to other models
• The availability of only two packaging options may not meet all circuit design requirements