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BFP640FE6327 - Brand New Infineon RF Transistors (BJT) - Datasheet - Chipdatas

BFP640FE6327 - Brand New Infineon RF Transistors (BJT)

In Stock:4923 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 4923, Ready for Immediate Shipping
Brand:Infineon
Chipdatas Part No.:CD93-BFP640FE6327
Manufacturer Part No.:BFP640FE6327
Datecode:09+
Package:4-SMD, Flat Leads
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  • Product Brief

    The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 46 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.

    Features

    • Robust very low noise amplifier based on Infineon´s
    reliable, high volume SiGe:C wafer technology
    • 2 kV ESD robustness (HBM) due to integrated protection circuits
    • High maximum RF input power of 21 dBm
    • 0.6 dB minimum noise figure typical at 1.5 GHz,
    0.65 dB at 2.4 GHz, 6 mA
    • 28.5 dB maximum gain Gms typical at 1.5 GHz,
    25 dB Gms at 2.4 GHz, 30 mA
    • 26 dBm OIP3 typical at 2.4 GHz, 30 mA
    • Thin small flat Pb-free (RoHS compliant) and halogen-free package
    with visible leads
    • Qualification report according to AEC-Q101 available

    Applications

    As Low Noise Amplifier (LNA) in
    • Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB, Bluetooth
    • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
    • Multimedia applications such as mobile / portable TV, CATV, FM radio
    • 3G/4G UMTS/LTE mobile phone applications
    • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
    As discrete active mixer, amplifier in VCOs and buffer amplifier

  • Similar parts: 819 , Click to view
    Attributes Value
    Category RF Transistors (BJT)
    Manufacturer Infineon
    Product Category RF Transistors (BJT)
    Series -
    Packaging
    Package-Case 4-SMD, Flat Leads
    Mounting-Type Surface Mount
    Supplier-Device-Package 4-TSFP
    Power-Max 200mW
    Transistor-Type NPN
    Electric current collectors 50mA
    Voltage-Collector-Emitter-Breakdown-Max 4.5V
    DC-Current-Gain-hFE-Min-Ic-Vce 110 @ 30mA, 3V
    Frequency-Transition 40GHz
    Noise-Figure-dB-Typ-f 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
    Gain 23dB
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download BFP640FE6327
  • Chipdatas Part: CD93-BFP640FE6327
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/07/01 08:47 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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