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Description
The 74V08 is an advanced high-speed CMOS single 2-input NAND gate fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It features high speed with a typical propagation delay of 3.7 ns at VCC = 5V. The 74V08 has low power dissipation with a maximum ICC of 1 µA at TA = 25 oC. It also has high noise immunity with VNIH and VNIL at 28% of VCC.
Specifications and features
- High speed: tPD = 3.7 ns (TYP.) at VCC = 5V
- Low power dissipation: ICC = 1 µA (MAX.) at TA = 25 oC
- High noise immunity: VNIH = VNIL = 28% VCC (MIN.)
- Powerdown protection on inputs
- Symmetrical output impedance: |IOH| = IOL = 8 mA (MIN)
- Balanced propagation delays: tPLH ≅ tPHL
- Operating voltage range: VCC (OPR) = 2V to 5.5V
- Improved latch-up immunity
Application Scenarios
The 74V08 can be used in various electronic projects and applications that require high-speed CMOS NAND gate functionality. It is suitable for use in digital logic circuits, data processing systems, communication systems, and more.
Comparison
Advantages- High-speed operation
- Low power dissipation
- High noise immunity
- Powerdown protection on inputs
- Symmetrical output impedance
- Balanced propagation delays
- Wide operating voltage range
- Improved latch-up immunity
DisadvantagesNo specific disadvantages have been identified for the 74V08 model.
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download 74V08
- Chipdatas Part: CD94-74V08
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/05/21 03:40 +0800
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