Description

The FM24C04B-G is a 4-kilobit nonvolatile memory chip that uses an advanced ferroelectric process. Unlike other nonvolatile memories like EEPROM, this chip is a ferroelectric random access memory (FRAM) that provides reliable data retention for 38 years without the complexities and system reliability problems. It performs both reads and writes like a RAM.

Specifications and features

- 4K bit Ferroelectric Nonvolatile RAM
- Organized as 512 x 8 bits
- High Endurance: 1012 Read/Writes
- 38 Year Data Retention
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process
- Fast Two-wire Serial Interface
- Up to 1 MHz maximum bus frequency
- Direct hardware replacement for EEPROM
- Supports legacy timing for 100 kHz & 400 kHz
- Low Power Operation
- 5V operation
- 100 µA Active Current (100 kHz)
- 4 µA (typ.) Standby Current
- Industry Standard Configuration
- Industrial Temperature -40° C to +85° C
- 8-pin “Green”/RoHS SOIC (-G)

Application Scenarios

The FM24C04B-G is commonly used in electronic devices and circuits that require reliable nonvolatile memory storage. It can be utilized in various applications, including but not limited to:

• Embedded systems
• Smart meters
• Industrial controls
• Consumer electronics
• Automotive electronics

Comparison

- Reliable data retention for 38 years - Performs reads and writes like a RAM - High endurance with 1012 read/writes - Low power operation with low standby current - Industry standard configuration and temperature range

- Limited storage capacity of 4-kilobit