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M25P16-VMW6G - Brand New Micron Technology Inc. Memory - Datasheet - Chipdatas

M25P16-VMW6G - Brand New Micron Technology Inc. Memory

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Category:Memory
Chipdatas Part No.:CD86-M25P16-VMW6G
Manufacturer Part No.:M25P16-VMW6G
Datecode:09+
Package:8-SOIC 0.209", 5.30mm Width
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  • Description

    The M25P16-VMW6G is a serial flash memory with 16 Mbit storage capacity (2 M × 8). This electronic component provides advanced write protection and offers high-speed access through an SPI-compatible bus. Users can program the memory 1 to 256 bytes at a time using the Page Program instruction. The memory is divided into 32 sectors, each consisting of 256 pages, and each page is 256 bytes in width. The memory has a total of 8192 pages or 2097152 bytes of storage capacity. The Bulk Erase instruction allows users to erase the entire memory, and the Sector Erase instruction allows users to erase one sector at a time.

    Specifications and Features

    • Memory Capacity: 16 Mbit
    • Page Program: up to 256 Bytes in 0.64ms (typical)
    • Sector Erase: 512 Kbit in 0.6s (typical)
    • Bulk Erase: 16 Mbit in 13s (typical)
    • Supply Voltage: 2.7 V to 3.6 V
    • Interface: SPI Bus compatible serial interface
    • Clock Rate: up to 50 MHz (maximum)
    • Power Consumption: Deep Power-down Mode 1µA (typical)
    • Electronic Signatures:
      • JEDEC standard two-byte signature(2015h)
      • RES instruction, one-byte, signature (14h),for backward compatibility
    • Erase/Program Cycles: More than 100,000 cycles per sector
    • Write Protection: Hardware write protection: Protected area size defined by three non-volatile bits (BP0, BP1 and BP2)
    • Data Retention: More than 20 years
    • Packages: ECOPACK® (RoHS compliant)

    Application Scenarios

    The M25P16-VMW6G memory can be used in various electronic devices that require high-capacity storage capacity with advanced write protection mechanisms, such as industrial equipment, medical devices, automotive electronics, and more.

    Comparison

    Advantages
    • High storage capacity of 16 Mbit
    • Advanced write protection mechanisms
    • Uses a low-power mode of 1µA
    • More than 100,000 cycles per sector
    • More than 20 years of data retention
    • RoHS compliant packages
    Disadvantages
    • Program and erase times slightly higher compared to other similar memory components
    • Limited to SPI bus compatible serial interface only
  • Similar parts: 9920 , Click to view
    Attributes Value
    Category Memory
    Manufacturer Micron Technology Inc.
    Product Category Memory ICs
    Series -
    Packaging Tube Alternate Packaging
    Package-Case 8-SOIC (0.209", 5.30mm Width)
    Operating-Temperature -40°C ~ 85°C (TA)
    Interface SPI Serial
    Voltage-Supply 2.7 V ~ 3.6 V
    Supplier-Device-Package 8-SO W
    Memory Capacity 16M (2M x 8)
    Memory-Type FLASH - NOR
    Speed 75MHz
    Format-Memory FLASH
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
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    • - View in your order page
    Shipping option:
    DHL, FedEx, EMS, SF Express, and Registered Air Mail
    Shipping tracking:
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    How to Buy:
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    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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    • - Wire transfer, include Local bank transfer.
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Contact us
Additional Information
  • Datasheet: Download M25P16-VMW6G
  • Chipdatas Part: CD86-M25P16-VMW6G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 07:17 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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