Description

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.

Specifications and features

• Part Identification
- KM416C1000C/C-L (5V, 4K Ref.)
- KM416C1200C/C-L (5V, 1K Ref.)
- KM416V1000C/C-L (3.3V, 4K Ref.)
- KM416V1200C/C-L (3.3V, 1K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Perfomance Range
• Fast Page Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

Application Scenarios

Examples of application scenarios for this electronic component model include:

• Memory modules for computers and servers
• Embedded systems for industrial automation
• Consumer electronics products

Comparison

Advantages and disadvantages of this electronic component model are as follows:

• High speed random access within the same row
• Optional features such as power supply voltage, refresh cycle, access time, power consumption, and package type
• Wide range of performance
• Compatibility with TTL and LVTTL inputs and outputs

• Specific to DRAM memory applications
• Requires specific power supply voltage
• Available in limited package options