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IRFI4019H-117P - Brand New Infineon FETs - Arrays - Datasheet - Chipdatas

IRFI4019H-117P - Brand New Infineon FETs - Arrays

In Stock:7377 ,Ready for Immediate Shipping
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In Stock: 7377, Ready for Immediate Shipping
Brand:Infineon
Category:FETs - Arrays
Chipdatas Part No.:CD91-IRFI4019H-117P
Manufacturer Part No.:IRFI4019H-117P
Datecode:09+
Package:TO-220-5 Full Pack
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  • Description

    This IRFI4019H-117P is a Digital Audio MosFET Half-Bridge that is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches that are connected in a half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. This Half-Bridge is a highly efficient, robust and reliable device for Class D audio amplifier applications.

    Specifications and Features

    • Product Category: FETs - Arrays
    • Integrated Half-Bridge Package
    • Facilitates Better PCB Layout
    • Key Parameters Optimized for Class-D Audio Amplifier Applications
    • Low RDS(ON)for Improved Efficiency
    • Low Qg and Qsw for Better THD and Improved Efficiency
    • Low Qrr for Better THD and Lower EMI
    • Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
    • Lead-Free Package

    Application Scenarios

    The IRFI4019H-117P is a Digital Audio MosFET Half-Bridge that can be used for Class D audio amplifier applications. It can deliver up to 200W per channel into 8Ω load in Half-Bridge Configuration Amplifier. This device is a highly efficient, robust and reliable device that can be used in a variety of Class D audio amplifier applications.

    Comparison

    Advantages
    • Reduces the Part Count by Half
    • Facilitates Better PCB Layout
    • Low RDS(ON) for Improved Efficiency
    • Low Qg and Qsw for Better THD and Improved Efficiency
    • Low Qrr for Better THD and Lower EMI
    • Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
    Disadvantages

    No known disadvantages were found for the IRFI4019H-117P Digital Audio MosFET Half-Bridge.

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer Infineon
    Product Category FETs - Arrays
    Series -
    Packaging Tube
    Unit-Weight 0.211644 oz
    Mounting-Style Through Hole
    Package-Case TO-220-5 Full Pack
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Number-of-Channels 2 Channel
    Supplier-Device-Package TO-220-5 Full-Pak
    Configuration Half-Bridge
    FET-Type 2 N-Channel (Dual)
    Power-Max 18W
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 150V
    Input Capacitance 810pF @ 25V
    FET-Feature Standard
    Current-Continuous-Drain-Id-25°C 8.7A
    Rds-On-Max-Id-Vgs 95 mOhm @ 5.2A, 10V
    Vgs-th-Max-Id 4.9V @ 50μA
    Gate-Charge-Qg-Vgs 20nC @ 10V
    Pd-Power-Dissipation 18 W
    Operating temperature range - 40 C
    Fall-Time 3.1 ns
    Rise-Time 6.6 ns
    Vgs-Gate-Source-Voltage 20 V
    ID (drain current) 8.7 A
    Vds-Drain-Source-Breakdown-Voltage 150 V
    Rds-On-Drain-Source-Resistance 80 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 13 ns
    Turn-On Delay Time 7 ns
    Qg-Gate-Charge 13 nC
    Channel-Mode Enhancement
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
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Additional Information
  • Datasheet: Download IRFI4019H-117P
  • Chipdatas Part: CD91-IRFI4019H-117P
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 14:42 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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