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Product Details
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-100 Volt, 0.087Ω, RAD HARD HEXFET
International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105Rads (Si). Under identical pre- and post- radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier’s P-channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
Features:
■ Radiation Hardened up to 1 x 105 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Ceramic Eyelets -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download HM91650A
- Chipdatas Part: CD94-HM91650A
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 10:56 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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