Description

Electronic Component Model: MRF7S16150HSR

Product Category: RF FETs

1930-1990 MHz, 36 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Specifications and features

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @0.01% Probability on CCDF.

• Power Gain — 18 dB

• Drain Efficiency — 32%

• Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF

• ACPR @ 5 MHz Offset — -38.5 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW Output Power

• Pout @ 1 dB Compression Point 120 W CW

Application Scenarios

• CDMA base station applications

• Class AB and Class C for all typical cellular base station modulation formats

• Digital Predistortion Error Correction Systems

Comparison

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

None mentioned