IM290B

Product Details

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[ Integrated Memory Technologies, Inc. ]

General Descriptions

The IM29LV001T/B is a 1 Mega-bit, 5V-only page erasable flash memory organized as 128K X 8 bits.It is manufactured with IMT’s proprietary double metal, 0.40 µm CMOS flash technology. High performance cell design and advanced process technology attain better reliability, manufacturability, circuit performance and future scaleability than other alternative approaches. Fast, self-timed program/erase operations are made possible with an innovative cell and array architecture which is free from the over-erase problem of the traditional stacked-gate structures.

Features:

● 0.40 µm, triple-poly double-metal CMOS process
● Single power supply operation
3.3V ± 10% for both read and write
● High endurance

10,000 program/erase cycles
● Fast read access time
70 and 90 ns
● Single page erasability for optimal data alterability
Page size: 512 bytes
● Hardwired data protection
Inhibits program and erase operations of the top (IM29LV001T) or bottom (IM29LV001B) 32 pages of the array for false write and virus prevention.
● Flexible boot block configurability
● Fast program and erase operations:
Byte program : < 35 µsec typical
Page erase : < 7 msec typical
Chip erase : < 2 sec typical
● Self-timed program/erase operations with end-of-cycle detection
Data# Polling and Toggle Bit
● Inadvertent write protection
Glitch filtering for WE# and CE#
Low Vcc (< 2.2 V ) write inhibit
Hardwired data protection
● Low Icc for power conservation
Read: 6 ma typical
Write: 10 ma typical
Stand-by: 10 µA typical
● Compatible with JEDEC byte wide pinout and single-supply flash command standards
● Package types:
32-pin PLCC, TSOP and PDIP
Others available upon request