TPS1H200AQDGNRQ1

TPS1H200AQDGNRQ1 Description

The TPS1H200AQDGNRQ1 is a single-channel high-side power switch with an inbuilt 200-m NMOS power FET that is fully shielded.
By restricting the inrush or overload current, an adjustable current limit increases system reliability. The current limit's excellent accuracy increases overload protection while simplifying the front-stage power architecture. Aside from the current limit, configurable features allow design freedom in terms of functionality, cost, and thermal dissipation.
With the digital status output, the gadget offers complete diagnostics. In both the ON and OFF settings, open-load detection is provided. The gadget can be used with or without an MCU. Isolated systems can use the device in stand- alone mode.

TPS1H200AQDGNRQ1 Features

• Qualified for automotive applications
• AEC-Q100 qualified with the following results:
– Device temperature grade 1: –40°C to +125°C ambient operating temperature range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C4B
• Functional Safety-Capable
– Documentation available to aid functional safety system design
• Single-channel 200-mω smart high-side switch
• Wide operating voltage: 3.4 V to 40 V
• Ultra-low standby current, < 500 nA
• Adjustable current limit with external resistor
– ±15% when ≥ 500 mA
– ±10% when ≥ 1.5 A
• Configurable behavior after current limit
– Holding mode
– Latch-off mode with adjustable delay time
– Auto-retry mode
• Supports stand-alone operation without an MCU
• Protection:
– Short-to-GND and overload protection
– Thermal shutdown and thermal swing
– Negative voltage clamp for inductive loads
– Loss of GND and loss of battery protection
• Diagnostics:
– Overload and short-to-GND detection
– Open-load and short-to-battery detection in ON or OFF state
– Thermal shutdown and thermal swing

TPS1H200AQDGNRQ1 Applications

• Body Lighting
• Infotainment System
• Advanced Driver Assistance Systems (ADAS)
• Single-channel High-side Switch for Submodules
• General Resistive, Inductive, and Capacitive Loads