L3K

PRODUCT DESCRIPTION

The SST32HF20x/40x ComboMemory devices integrate a 128K x16 or 256K x16 CMOS flash memory bank with a 64K x16 or 128K x16 CMOS SRAM memory bank in a Multi- Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology.

FEATURES:

• MPF + SRAM ComboMemory
– SST32HF201: 128K x16 Flash + 64K x16 SRAM
– SST32HF202: 128K x16 Flash + 128K x16 SRAM
– SST32HF401: 256K x16 Flash + 64K x16 SRAM
– SST32HF402: 256K x16 Flash + 128K x16 SRAM
• Single 2.7-3.3V Read and Write Operations
• Concurrent Operation
– Read from or write to SRAM while Erase/Program Flash
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 15 mA (typical) for Flash or SRAM Read
– Standby Current: 20 µA (typical)
• Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
• Fast Read Access Times:
– Flash: 70 and 90 ns
– SRAM: 70 and 90 ns
• Latched Address and Data for Flash
• Flash Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time:
SST32HF201/202: 2 seconds (typical)
SST32HF401/402: 4 seconds (typical)
• Flash Automatic Erase and Program Timing
– Internal VPP Generation
• Flash End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Conforms to Flash pinout
• Package Available
– 48-ball LFBGA (6mm x 8mm)