25F0418-2SR

DESCRIPTION

The NX25F011A and NX25F041A Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using NexFlash's patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost- effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read and Erase/Write with typical current consumption as low as 5 mA active and less than 1 µA standby. Sector erase/write speeds as fast as 5 ms increase system performance, minimize power-on time, and maximize battery life.

FEATURES

• Flash Storage for Resource-Limited Systems
– Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data
• NexFlash Serial Flash Memory
– Patented single transistor EEPROM technology
– High-density, low-voltage & power, cost-effective
– Small 264-byte sectors
– 10K/100K write cycles, ten years data retention
• Ultra-low Power for Battery-Operation
– Single 5V or 3V supply for read and erase/write
– 1 µA standby current, 5 mA active @ 3V (typical)
– Low frequency read command for very low power
– No pre-erase. Erase/Write time of 5 ms/sector @ 5V ensures efficient battery use JUNE 1999
• 4-pin SPI Serial Interface
– Easily interfaces with popular microcontrollers
– Clock operation as fast as 16 MHz
• On-chip Serial SRAM
– Dual 264-byte Read/Write SRAM buffers
– Use in conjunction with or independent of Flash
– Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
– Byte-level addressing
– Transfer and compare sector to SRAM commands
– Versatile hardware and software write-protection
– Alternate oscillator frequency for EMI sensitive applications.
– In-system electronic part number identification
– Removable Serial Flash Module package option