LC3564BM-10

Description

The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. These SRAMs provide three control signal inputs: an OE input for high-speed memory access, and two chip enable lines, CE1 and CE2, for low power mode and device selection. These means that these SRAMs area ideal for systems that require low power and battery backup, and that they support easy memory expansion. The ultralow standby current that is a feature of these SRAMs allows them to be used with capacitor backup as well. Since these SRAMs support 3-V operation, they are also appropriate for use in portable battery operated systems.

Features

• Supply voltage range: 2.7 to 5.5 V
— In 5-V operation mode: 5.0 V ±10%
— In 3-V operation mode: 3.0 V ±10%
• Address access time (tAA)
— In 5-V operation mode:
LC3564B, BS, BM, and BT-70: 70 ns (max)
LC3564B, BS, BM, and BT-10: 100 ns (max)
— In 3-V operation mode:
LC3564B, BS, BM, and BT-70: 200 ns (max)
LC3564B, BS, BM, and BT-10: 500 ns (max)
• Ultralow standby current
— In 5-V operation mode: 1.0 µA (Ta ≤70°C), 3.0 µA (Ta ≤85°C)
— In 3-V operation mode: 0.8 µA (Ta ≤70°C), 2.5 µA (Ta ≤85°C)
• Operating temperature range
— In 5-V operation mode: –40 to 85°C
— In 3-V operation mode: –40 to 85°C
• Data retention supply voltage: 2.0 to 5.5 V
• All input and output levels:
— In 5-V operation mode: TTL compatible levels
— In 3-V operation mode: VCC –0.2 V/0.2 V
• Three control inputs: OE, CE1, and CE2
• Shared input and output pins, three-state outputs
• No clock required
• Packages
28-pin DIP (600 mil) plastic package: LC3564B
28-pin DIP (300 mil) plastic package: LC3564BS
28-pin SOP (450 mil) plastic package: LC3564BM
28-pin TSOP (8 ×13.4 mm) plastic package: LC3564BT