R8070J (11940-41)

Description

The M36P0R8070E0 combines two memories in a multichip package:
● 256-Mbit multiple bank Flash memory (the M58PR256J)
● 128-Mbit PSRAM (the M69KB128AA).
This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Numonyx distributor.
Recommended operating conditions do not allow more than one memory to be active at the same time.
The memory is offered in a stacked TFBGA107 package, and it is supplied with all the bits erased (set to ‘1’).

Features

■ Multichip package
– 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory
– 1 die of 128 Mbit (8 Mb x16) PSRAM
■ Supply voltage
– VDDF = VCCP = VDDQ = 1.7 to 1.95 V
– VPPF = 9 V for fast program (12 V tolerant)
■ Electronic signature
– Manufacturer code: 20h
– Device code: 8818
■ Package
– ECOPACK®

Flash memory

■ Synchronous/asynchronous read
– Synchronous burst read mode: 108 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 93 ns
■ Programming time
– 4 µs typical Word program time using Buffer Enhanced Factory Program command
■ Memory organization
– Multiple bank memory array: 32 Mbit banks
– Four EFA (extended flash array) blocks of 64 Kbits
■ Dual operations
– Program/erase in one bank while read in others
– No delay between read and write operations
■ Security
– 64bit unique device number
– 2112 bit user programmable OTP Cells
■ 100 000 program/erase cycles per block
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked with zero latency
– WPF for block lock-down
– Absolute write protection with VPPF = VSS
■ CFI (common Flash interface)

PSRAM

■ Access time: 70 ns
■ Asynchronous page read
– Page size: 4, 8 or 16 words
– Subsequent read within page: 20 ns
■ Synchronous burst read/write
■ Low power consumption
– Active current: < 25 mA
– Standby current: 200 µA
– Deep power-down current: 10 µA
■ Low power features
– PASR (partial array self refresh)
– DPD (deep power-down) mode