TC58BVG0S3HTA00

Description

The TC58BVG0S3HTA00 is a single 3.3V 1Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes * 64 pages * 1024 blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes * 64 pages).

The TC58BVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally.

Features

• Organization x8
  Memory cell array 2112 * 64K * 8
  Register 2112*bytes
  Block size (128K + 4K) bytes

• Modes
  Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read

• Mode control
  Serial input/output
  Command control

• Number of valid blocks
  Min 1004 blocks
  Max 1024 blocks

• Power supply
  VCC = 2.7V to 3.6V

• Access time
  Cell array to register 40 μs typ.
  Read Cycle Time 25 ns min (CL=50pF)

• Program/Erase time
  Auto Page Program 330 s/page typ.
  Auto Block Erase 2.5 ms/block typ.

• Operating current
  Read (25 ns cycle) 30 mA max
  Program (avg.) 30 mA max
  Erase (avg.) 30 mA max
  Standby 50 A max

• Package
  TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)

• 8bit ECC for each 528Bytes is implemented on a chip.