Description

The AT45DB021E-SHN-B is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming. With 2,162,688 bits of memory, it is organized as 1024 pages of 264-bytes each. It also contains two SRAM data buffers of 264-bytes each, allowing the receiving of data while a page in the main memory is being reprogrammed. Unlike conventional Flash memories, the AT45DB021E-SHN-B uses a serial interface to sequentially access its data.

Specifications and features

- Single 2.7V - 3.6V Supply

- Serial Interface Architecture

- Page Program Operation: Single Cycle Reprogram (Erase and Program), 1024 Pages (264 Bytes/Page) Main Memory

- Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Non-Volatile Memory

- Internal Program and Control Timer

- Fast Page Program Time: 7 ms Typical

- 120 µs Typical Page to Buffer Transfer Time

- Low Power Dissipation: 4 mA Active Read Current Typical, 5 µA CMOS Standby Current Typical

- 5 MHz Max Clock Frequency

- Hardware Data Protection Feature

- Serial Peripheral Interface (SPI) Compatible - Modes 0 and 3

- CMOS and TTL Compatible Inputs and Outputs

- Commercial and Industrial Temperature Ranges

Application Scenarios

The AT45DB021E-SHN-B Flash memory can be used in a variety of applications such as:

• Electronic devices requiring in-system reprogramming
• Serial interface-based systems
• Memory-intensive applications

Comparison

- Single 2.7V - 3.6V supply voltage for low power consumption

- Fast page program time of 7 ms

- Internal program and control timer for efficient operation

- Hardware data protection feature for enhanced security

- Limited memory capacity of 2,162,688 bits

- Serial interface may not be suitable for all applications