Description

The MRF9135LSR3 is an RF Power Field Effect Transistor designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz. It is an N-Channel Enhancement-Mode Lateral MOSFET with high gain and broadband performance. This makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment.

Specifications and features

• On-Die Integrated Input Match
• Output Power, P1dB — 110 Watts (Typ)
• Power Gain @ P1dB — 16.5 dB (Typ)
• Efficiency @ P1dB — 53% (Typ)
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Application Scenarios

The MRF9135LSR3 is specifically designed for use in GSM and EDGE base station applications. It is suitable for frequencies ranging from 921 to 960 MHz. It can be used in 26 volt base station equipment for large-signal, common source amplifier applications.

Comparison

• High gain and broadband performance
• Excellent thermal stability
• Integrated ESD protection
• Designed for maximum gain and insertion phase flatness

• May not be suitable for applications outside of GSM and EDGE base stations
• Limited frequency range of 921 to 960 MHz