HY57V2562GTR-75C - Brand New Skhynix IC Chips
In Stock:200000 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
200000,
Ready for Immediate Shipping
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Description
The HY57V2562GTR-75C is a 512-Mbit CMOS Synchronous DRAM, ideally suited for main memory applications which require large memory density and high bandwidth. It is organized as 4 banks of 8,388,608x16. The HY57V2562GTR-75C offers fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Specifications and features
- Single 3.3±0.3V power supply
- All device pins are compatible with LVTTL interface
- JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch
- All inputs and outputs referenced to positive edge of system clock
- Data mask function by UDQM, LDQM
- Internal four banks operation
- Auto refresh and self refresh
- 8192 refresh cycles / 64ms
- Programmable Burst Length and Burst Type
- Programmable CAS Latency ; 2, 3 Clocks
Application Scenarios
The HY57V2562GTR-75C can be used in a variety of applications such as:
- Main memory of computers and servers
- Data storage devices
- Networking equipment
Comparison
Advantages- High memory density
- High bandwidth
Disadvantages- Requires a 3.3±0.3V power supply
- Limited compatibility with other interfaces
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Additional Information
- Datasheet: Download HY57V2562GTR-75C
- Chipdatas Part: CD88-HY57V2562GTR-75C
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 01:20 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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