Description

The IS43DR16320B-25EBL is an electronic component model in the IC Chips product category. It is a high-speed dynamic random access memory (DRAM) module with various programmable features and specifications.

Specifications and features

- Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V, Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V (backward compatible to 1.5V) - High-speed data transfer rates with system frequency up to 933 MHz - 8 internal banks for concurrent operation - 8n-Bit pre-fetch architecture - Programmable CAS Latency - Programmable Additive Latency: 0, CL-1, CL-2 - Programmable CAS WRITE latency (CWL) based on tCK - Programmable Burst Length: 4 and 8 - Programmable Burst Sequence: Sequential or Interleave - BL switch on the fly - Auto Self Refresh (ASR) - Self Refresh Temperature (SRT) - Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C, 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C - Partial Array Self Refresh - Asynchronous RESET pin - TDQS (Termination Data Strobe) supported (x8 only) - OCD (Off-Chip Driver Impedance Adjustment) - Dynamic ODT (On-Die Termination) - Driver strength: RZQ/7, RZQ/6 (RZQ = 240 Ω) - Write Leveling - Up to 200 MHz in DLL off mode - Operating temperature: Commercial (TC = 0°C to +95°C), Industrial (TC = -40°C to +95°C), Automotive, A1 (TC = -40°C to +95°C), Automotive, A2 (TC = -40°C to +105°C)

Application Scenarios

The IS43DR16320B-25EBL electronic component model is commonly used in various applications, including computer systems, mobile devices, automotive electronics, industrial equipment, and more.

Comparison

- High-speed data transfer rates - Programmable features for customization - Wide operating temperature range - Limited TDQS support only for x8 configuration