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FDS6892A
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FDS6892A - Brand New onsemi FETs - Arrays

In Stock:138 ,Ready for Immediate Shipping
New RoSH Lead free
In Stock: 138, Ready for Immediate Shipping
Brand:onsemi
Category:FETs - Arrays
Chipdatas Part No.:CD93-FDS6892A
Manufacturer Part No.:FDS6892A
Datecode:09+
Package:8-SOIC 0.154", 3.90mm Width
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PCS

  • General Description

    These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
    These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

    Features

    • 7.5 A, 20 V.
    RDS(ON) = 18 mW @ VGS = 4.5 V
    RDS(ON) = 24 mW @ VGS = 2.5 V
    • Low gate charge (12 nC)
    • High performance trench technology for extremely low RDS(ON)
    • High power and current handling capability

  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer onsemi
    Product Category FETs - Arrays
    Series PowerTrench®
    Packaging Alternate Packaging
    Part-Aliases FDS6892A_NL
    Unit-Weight 0.006596 oz
    Mounting-Style SMD/SMT
    Package-Case 8-SOIC (0.154", 3.90mm Width)
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package 8-SO
    Configuration Dual Dual Drain
    FET-Type 2 N-Channel (Dual)
    Power-Max 900mW
    Transistor-Type 2 N-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 1333pF @ 10V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 7.5A
    Rds-On-Max-Id-Vgs 18 mOhm @ 7.5A, 4.5V
    Vgs-th-Max-Id 1.5V @ 250μA
    Gate-Charge-Qg-Vgs 17nC @ 4.5V
    Pd-Power-Dissipation 2 W
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 9 ns
    Rise-Time 15 ns
    Vgs-Gate-Source-Voltage 12 V
    ID (drain current) 7.5 A
    Vds-Drain-Source-Breakdown-Voltage 20 V
    Rds-On-Drain-Source-Resistance 18 mOhms
    Transistor-Polarity N-Channel
    Typical-Turn-Off-Delay-Time 26 ns
    Turn-On Delay Time 8 ns
    Transconductance 37 S
    Channel-Mode Enhancement
  • Datasheet
    Not found or temporary maintenance
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
    • - Will ship out in 2-3 days
    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
    Shipping fee:
    • - Automatic Email notification (above 5 times)
    • - View in your order page
    Shipping option:
    DHL, FedEx, EMS, SF Express, and Registered Air Mail
    Shipping tracking:
    • - Automatic Email notification (above 5 times)
    • - View in your order page
    View more

    How to Buy:
    • - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
    • - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
    • View more
    Payment:
    • - Paypal,Credit Card includes Visa, Master, American Express.
    • - Wire transfer, include Local bank transfer.
    • - Western Union.
    • View more
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Contact us
Additional Information
  • Datasheet: Download FDS6892A
  • Chipdatas Part: CD93-FDS6892A
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/09/30 01:25 +0800
Refund
  • View Policy
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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Payment Method
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  • The fee is charged according to the rule of PayPal.
  • Western Union charge US$0.00 banking fee.
  • We recommend to use bank transfer for large orders to save on handling fees.
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