BLL6H1214L-250,112 - Brand New RF FETs
In Stock:563 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
563,
Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD90-BLL6H1214L-250,112
Manufacturer Part No.:BLL6H1214L-250,112
Datecode:09+
Package:SOT-502A
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Description
Electronic Component Model: BLL6H1214L-250,112 is a 250 W LDMOS power transistor designed for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Specifications and features
The features and benefits of this electronic component model include:
- Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz
- Supply voltage of 50 V
- IDq of 100 mA
- tp of 300 μs with δ of 10 %
- Output power of 250 W
- Power gain of 17 dB
- Efficiency of 55 %
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- Internally matched for ease of use
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Application Scenarios
This electronic component model is suitable for L-band power amplifiers in radar applications within the 1.2 GHz to 1.4 GHz frequency range.
Comparison
Advantages- High power output of 250 W
- Easy power control
- Integrated ESD protection
- High efficiency
- Excellent thermal stability
- Compliant to RoHS Directive 2002/95/EC
Disadvantages- No specific disadvantages mentioned
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Datasheet
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Shopping guide
Delivery period:
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Additional Information
- Datasheet: Download BLL6H1214L-250,112
- Chipdatas Part: CD90-BLL6H1214L-250,112
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 07:32 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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