MMBT5770 - Brand New onsemi RF Transistors (BJT)
In Stock:8350 ,Ready for Immediate Shipping
New
RoSH Lead free
In Stock:
8350,
Ready for Immediate Shipping
Brand:onsemi
Category:RF Transistors (BJT)
Chipdatas Part No.:CD91-MMBT5770
Manufacturer Part No.:MMBT5770
Datecode:09+
Package:TO-236-3, SC-59, SOT-23-3
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Description
NPN RF Transistor MMBT5770 is a device designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. It belongs to the product category of RF Transistors (BJT) and is sourced from process 43.
Specifications and features
- NPN RF Transistor
- Collector-Base Voltage of 50 V
- Collector-Emitter Voltage of 20 V
- Emitter-Base Voltage of 4 V
- Maximum DC Collector Current of 100 mA
- Power Dissipation of 225 mW
- Transition Frequency of 4.0 GHz
- Typical Input Capacitance of 1.5 pF
Application Scenarios
The MMBT5770 RF transistor can be used for various applications such as:
- RF Amplifiers
- RF Oscillators
- RF Multipliers
Comparison
Advantages- High transition frequency of 4.0 GHz
- Low input capacitance of 1.5 pF
- Can handle collector currents in the 1.0 mA to 30 mA range
- Can be used for RF amplifiers, oscillators, and multipliers
Disadvantages- Low collector-emitter voltage of 20 V
- Low power dissipation of 225 mW
- Not suitable for high power applications
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download MMBT5770
- Chipdatas Part: CD91-MMBT5770
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 07:20 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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