Description

The FQI7P06TU is a P-Channel MOSFET transistor, categorized as a Field Effect Tube and produced using Fairchild's planar stripe DMOS technology. It is designed to minimize on-state resistance, provide excellent switching performance and withstand high energy pulses in the avalanche and commutation modes. The transistor works well for use in low-voltage applications typical in the automotive and DC/DC converters industry, as well as in high-efficiency switching for power management in portable and battery-operated products.

Specifications and Features

Key specifications and features of the FQI7P06TU MOSFET transistor include:

• Maximum Drain-Source Voltage(Vdss) of -60V
• Maximum Continuous Drain Current(Id) of -7A
• Low gate charge (typical 6.3 nC)
• Low Crss (typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Maximum junction temperature rating of 175°C

Application Scenarios

The FQI7P06TU is specifically designed for use in low-voltage applications such as the automotive industry and DC/DC converters. It is also useful in high-efficiency switching for power management in portable and battery-operated products.

Comparison

• Fast switching
• Low gate charge
• Low Crss
• 100% avalanche tested for improved reliability
• Can withstand high-energy pulses in the avalanche and commutation modes
• Improved dv/dt capability

• Not suitable for use in high-voltage applications
• May not be suitable for use in some industrial applications