Description

The BFS483 E6327 is an NPN Silicon RF Transistor mainly used for low-noise, high-gain broadband amplification in electronic circuits. It is designed to operate at collector currents ranging from 2 mA to 28 mA. The transistor has a frequency transition (fT) value of 8 GHz, indicating its ability to amplify signals up to this frequency. Additionally, it has a gain factor (F) of 1.2 dB at 900 MHz. The key feature of this transistor is that it contains two internal isolated transistors within a single package, allowing for enhanced performance and efficiency.

Specifications and features

- NPN Silicon RF Transistor
- Low-noise, high-gain broadband amplifier
- Collector currents: 2 mA to 28 mA
- Frequency transition (fT): 8 GHz
- Gain factor (F): 1.2 dB at 900 MHz
- Two (galvanic) internal isolated transistors
- Single package

Application Scenarios

- RF amplifier circuits
- Wireless communication devices
- High-frequency signal processing systems
- Radio and television broadcasting
- Radar systems
- Satellite communication systems

Comparison

Advantages:
- Two internal isolated transistors provide enhanced performance
- Wide operating range of collector currents
- High gain and low noise characteristics
- Broadband amplifier suitable for various applications
- High-frequency capabilities for amplifying signals up to 8 GHz

Disadvantages:
- Not suitable for low-frequency applications
- Requires proper heat dissipation to avoid damage
- Sensitive to electrostatic discharge (ESD)
- Might require additional circuitry for specific applications