FQB11N40 - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)
In Stock:888 ,Ready for Immediate Shipping
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In Stock:
888,
Ready for Immediate Shipping
Brand:Fairchild Semiconductor
Category:Field Effect Tube (MOSFET)
Chipdatas Part No.:CD87-FQB11N40
Manufacturer Part No.:FQB11N40
Datecode:09+
Package:TO-263
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Description
The FQB11N40 is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance and provides superior switching performance. This transistor is designed to withstand high energy pulse in the avalanche and commutation mode, making it well-suited for applications such as high efficiency switch mode power supplies and electronic lamp ballasts based on a half bridge design.
Specifications and features
- Current: 11.4A
- Voltage: 400V
- RDS(on) at VGS = 10V: 0.48Ω
- Low gate charge: 27 nC (typical)
- Low Crss: 20 pF (typical)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application Scenarios
The FQB11N40 is mainly used in high efficiency switch mode power supplies and electronic lamp ballasts based on a half bridge design.
Comparison
Advantages- Minimized on-state resistance
- Superior switching performance
- Ability to withstand high energy pulses
- Improved dv/dt capability
Disadvantages- No disadvantages identified
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Similar parts: 25937 , Click to view
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Datasheet
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Additional Information
- Datasheet: Download FQB11N40
- Chipdatas Part: CD87-FQB11N40
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/30 06:38 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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