Description

iNAND’s optimized architecture eliminates the need for complicated software integration and testing processes thereby enabling plug-and-play integration into the host system. The replacement of one iNAND device with another of a newer generation requires virtually no changes to the host. This makes iNAND the perfect solution for mobile platforms and reference designs, as it allows for the utilization of more advanced NAND Flash technology with minimal integration or qualification efforts.

Features

Memory controller and NAND flash
Mechanical design complies with JEDED Specification
Offered in three TFBGA packages of e.MMC 5.02
- 11.5mm x 13mm x 1.0mm (16GB, 32GB, 64GB)
Operating temperature range: –25C° to +85C°
Dual power system
Core voltage (VCC) 2.7-3.6 V
I/O (VCCQ) voltage, either: 1.7-1.95V or 2.7-3.6V
- Note: Device operation under 3.3V VCCQ is limited to Max 1 hour
Up to 64GB of data storage.
Supports three data bus widths: 1bit (default), 4bit, 8bit.
Complies with e.MMC Specification Ver. 5.0 HS400
Variable clock frequencies of 0-20 MHz, 0-26 MHz (default), 0-52 MHz (high- speed), 0-200 MHz SDR (HS200), 0-200 MHz DDR (HS400)
Up to 400 MB/sec bus transfer rate, using 8 parallel data lines at 200 MHz, HS400 Mode
Correction of memory field errors
Designed for portable and stationary applications that require high performance and reliable data storage