GCIXP1200EA

Functional Description

The CY7C1354A/GVT71256ZC36 and CY7C1356A/GVT71512ZC18 SRAMs are designed to eliminate dead cycles when transitioning from Read to Write or vice versa. These SRAMs are optimized for 100% bus utilization and achieve Zero Bus Latency™ (ZBL™)/No Bus Latency™ (NoBL™). They integrate 262,144 × 36 and 524,288 × 18 SRAM cells, respectively, with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. These employ high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors.

Features

• Zero Bus Latency, no dead cycles between Write and Read cycles
• Fast clock speed: 200, 166, 133, 100 MHz
• Fast access time: 3.2, 3.6, 4.2, 5.0 ns
• Internally synchronized registered outputs eliminate the need to control OE
• Single 3.3V –5% and +5% power supply VCC
• Separate VCCQ for 3.3V or 2.5V I/O
• Single WEN (Read/Write) control pin
• Positive clock-edge triggered, address, data, and control signal registers for fully pipelined applications
• Interleaved or linear four-word burst capability
• Individual byte Write (BWa–BWd) control (may be tied LOW)
• CEN pin to enable clock and suspend operations
• Three chip enables for simple depth expansion
• Automatic power-down feature available using ZZ mode or CE select
• JTAG boundary scan
• Low-profile 119-bump, 14-mm × 22-mm BGA (Ball Grid Array), and 100-pin TQFP packages