WS27C64L-12D

GENERAL DESCRIPTION

The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no- wait state operation. And where this parameter is important, the WS27C010L provides the user with a very fast 35 nsec TOE output enable time.
The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade density paths for existing 128K and 256K EPROM users.

KEY FEATURES

• High Performance CMOS
— 90 ns Access Time
• Fast Programming
• EPI Processing
— Latch-Up Immunity to 200 mA
— ESD Protection Exceeds 2000 Volts
• DESC SMD No. 5962-89614
• Compatible with JEDEC 27010 and 27C010 EPROMs
• JEDEC Standard Pin Configuration
— 32 Pin CERDIP Package
— 32 Pin Leadless Chip Carrier (CLLCC)