NAND04GW3B2DN6E

Summary description

The NAND04GA3C2A and NAND04GW3C2A are a Multi-level Cell(MLC) devices from the NAND Flash 2112 Byte Page family of non-volatile Flash memories. The devices are offered in 1.8V and 3V VDDQ I/O power supplies. The core voltage is 3V VDD. The size of a Page is 2112 Bytes (2048 + 64 spare).

Features

■ High density multi-level Cell (MLC) NAND Flash memories:
– Up to 128 Mbit spare area
– Cost effective solutions for mass storage applications
■ NAND interface
– x8 bus width
– Multiplexed Address/ Data
■ Supply voltages
– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations.
– VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O buffers.
■ Page size: (2048 + 64 spare) Bytes
■ Block size: (256K + 8K spare) Bytes
■ Page Read/Program
– Random access: 60µs (max)
– Sequential access: 60ns(min)
– Page Program Operation time: 800µs (typ)
■ Cache Read mode
– Internal Cache Register to improve the read throughput
■ Fast Block Erase
– Block erase time: 1.5ms (typ)
■ Status Register
■ Electronic Signature
■ Serial Number option
■ Chip Enable ‘don’t care’
– for simple interface with microcontroller
■ Data Protection
– Hardware Program/Erase locked during power transitions
■ Embedded Error Correction Code (ECC)
– Internal ECC accelerator
– Easy ECC Command Interface
■ Data integrity
– 10,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
■ ECOPACK® package available
■ Development tools
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models