V58C2256164SHI4

Description

The V58C2256(804/404/164)S is a four bank DDR DRAM organized as 4 banks x 8Mbit x 8 (804), 4 banks x 4Mbit x 16 (164), or 4 banks x 16Mbit x 4 (404). The V58C2256(804/404/164)S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock. I/O transactions are ocurring on both edges of DQS.

Features

■ High speed data transfer rates with system frequency up to 166 MHz
■ Data Mask for Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 2.5
■ Programmable Wrap Sequence: Sequential or Interleave
■ Programmable Burst Length:
2, 4, 8 for Sequential Type
2, 4, 8 for Interleave Type
■ Automatic and Controlled Precharge Command
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 8192 cycles/64 ms
■ Available in 66-pin 400 mil TSOP or 60 Ball SOC BGA
■ SSTL-2 Compatible I/Os
■ Double Data Rate (DDR)
■ Bidirectional Data Strobe (DQS) for input and output data, active on both edges
■ On-Chip DLL aligns DQ and DQs transitions with CK transitions
■ Differential clock inputs CK and CK
■ Power Supply 2.5V ± 0.2V
■ QFC options for FET control. x4 parts.