N28F020-90

Product Details

__

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during final test; and in-system after-sale. The 28F020 increases memory flexibility, while contributing to time-and cost-savings.

■ Flash Electrical Chip-Erase

— 2 Second Typical Chip-Erase
■ Quick-Pulse Programming Algorithm
— 10 ms Typical Byte-Program
— 4 Second Chip-Program
■ 100,000 Erase/Program Cycles
■ 12.0V g5% VPP
■ High-Performance Read
— 70 ns Maximum Access Time
■ CMOS Low Power Consumption
— 10 mA Typical Active Current
— 50 mA Typical Standby Current
— 0 Watts Data Retention Power
■ Integrated Program/Erase Stop Timer
■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
■ Noise Immunity Features
— g10% VCC Tolerance
— Maximum Latch-Up Immunity through EPI Processing
■ ETOXTM Nonvolatile Flash Technology
— EPROM-Compatible Process Base
— High-Volume Manufacturing Experience
■ JEDEC-Standard Pinouts
— 32-Pin Plastic Dip
— 32-Lead PLCC
— 32-Lead TSOP
(See Packaging Spec., Order Ý231369)
■ Extended Temperature Options