GVT71256F18T-5TR

Functional Description

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

Features

• Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns
• Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz
• Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns
• Optimal for performance (two cycle chip deselect, depth expansion without wait state)
• 3.3V –5% and +10% power supply
• 3.3V or 2.5V I/O supply
• 5V tolerant inputs except I/Os
• Clamp diodes to VSS at all inputs and outputs
• Common data inputs and data outputs
• Byte Write Enable and Global Write control
• Multiple chip enables for depth expansion: three chip enables for TA(GVTI)/A(CY) package version and two chip enables for B(GVTI)/BG(CY) and T(GVTI)/AJ(CY) package versions
• Address pipeline capability
• Address, data and control registers
• Internally self-timed Write Cycle
• Burst control pins (interleaved or linear burst sequence)
• Automatic power-down for portable applications
• JTAG boundary scan for B and T package version
• Low profile 119-bump, 14-mm x 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages