MBC13917EPR2

Introduction

The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This is the leadless package version of the MBC13916 device.
The MBC13917 is designed for a wide range of general purpose RF applications and has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.

Features

The MBC13917 has the following features:
• Usable frequency range = 100 MHz to 2500 MHz
• 27 dB typical gain at 434 MHz, Vcc = 2.7V
• NFmin (device level) = 0.95 dB @ 434 MHz
• NFmin (device level) = 0.95 dB @ 900 MHz
• 6.5 dBm typical output power at -10 dBm Pin at 900 MHz, Vcc = 2.7V
• 46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.7V
• 4.7 mA typical bias current at Vcc = 2.7V
• 2.7V to 3.3V supply
• Industry standard MLPD-6 leadless package
• Available only in tape and reel packaging

Applications

Ideal for use in any RF product that operates between 100 MHz and 2.5 GHz, and may be applied in:
• Buffer amplifiers
• Mixers
• IF amplifiers
• Voltage controlled oscillators (VCOs)
• Low power amplifiers
• Gain block in RF end products
• Smart metering
• Industrial—scientific and medical (ISM)
• Consumer—WLAN, 802.11 b/g
• Auto—TPMS, RKE, GPS, active antennas, wireless security