MBM29F016A-90PFTN

■ GENERAL DESCRIPTION

The MBM29F016A is a 16 M-bit, 5.0 V-Only Flash memory organized as 2 M bytes of 8 bits each. The 2 M bytes of data is divided into 32 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ0 to DQ7. The MBM29F016A is offered in a 48-pin TSOP(I) package. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

■ FEATURES

• Single 5.0 V read, write, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
• Minimum 100,000 write/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
Uniform sectors of 64 K bytes each
Any combination of sectors can be erased. Also supports full chip erase.
• Embedded Erase™ Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program™ Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Low VCC write inhibit ≤ 3.2 V
• Hardware RESET pin
Resets internal state machine to the read mode
• Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
• Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group consists of 4 adjacent sectors of 64 K bytes each)
• Temporary sector groups unprotection
Temporary sector unprotection via the RESET pin