RFD16N05LSM9A

These N-channel logic level power MOSFETs are manufactured using the MegaFET process. This process uses feature sizes close to those of LSI integrated circuits, allowing for optimal use of silicon and therefore excellent performance. They are suitable for logic level (5V) driven power supplies in applications such as programmable controllers, automotive switches, switching regulators, motor relay drivers, and emitter switches for bipolar transistors. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias in the 3V to 5V range, thus allowing true switching power control directly in the logic circuit supply voltage. The previous development model was TA09871.